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| SOT223 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 5- MARCH 2001 FZTA64 4 PARTMARKING DETAILS: COMPLIMENTARY TYPE: FZTA64 FZTA14 2 1 SOT223 3 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Peak Base Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC I BM P tot T j:T stg VALUE -30 -30 -10 -800 -500 -200 2 -55 to +150 UNIT V V V mA mA mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE fT 10K 20K 125 MHz MIN. -30 -30 -10 -100 -100 -1.5 -2.0 MAX. UNIT V V V nA nA V V CONDITIONS. I C=-10A, I E=0 I C=-10mA, I B=0* I E=-10A, I C=0 V CB=-30V, I E=0 V EB=-10V, I C=0 I C=-100mA, I B=-0.1mA* I C=-100mA, I B=-0.1mA* IC=-10mA, V CE=-5V I C=-100mA, V CE=-5V* I C=-50mA, V CE=-5V f=20MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% TBA FZTA64 TYPICAL CHARACTERISTICS 1.5 +25 C 1.5 IC/IB=1000 VCE(sat) - (V) VCE(sat) - (V) 1.0 1.0 0.5 IC/IB=1000 0.5 -55 C +25 C +100 C 0 1m 10m 100m 1 10 0 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC 60k VCE=5V VCE(sat) v IC 2.1 IC/IB=1000 hFE - Typical Gain 45k +100 C 30k +25 C VBE(sat) - (V) 1.4 0.7 15k -55 C +25 C +100 C 0 1m -55 C 0 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC 1 VCE=5V VBE(sat) v IC VBE(on) - (V) 1.5 IC - Collector Current (A) 2.0 0.1 1.0 -55 C +25 C +100 C 0.5 DC 1s 100ms 10ms 1ms 100s 0 1m 10m 100m 1 10 0.01 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area TBA |
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